2008. 9. 8 1/2 semiconductor technical data kdr105 schottky barrier type diode revision no : 3 high frequency rectification (switching regulators, converters, choppers) features h low forward voltage : v f max=0.55v. h low leakage current : i r max=10 a. maximum rating (ta=25 ? ) dim millimeters a b d e 1. nc 2. anode 3. cathode usm 2.00 0.20 1.25 0.15 0.90 0.10 0.3+0.10/-0.05 2.10 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 c g h j k l k 1 3 2 e b d a j g c l h mm n n m 0.42 0.10 n 0.10 min 3 2 1 + _ + _ + _ + _ + _ electrical characteristics (ta=25 ? ) dl type name marking lot no. characteristic symbol test condition min. typ. max. unit reverse voltage v r i r =50 a 50 - - v forward voltage v f i f =0.1a - - 0.55 v reverse current i r v r =25v - - 10 a total capacitance c t v r =10v, f=1mhz - 7.7 - pf characteristic symbol rating unit repetitive peak reverse voltage v rrm 50 v reverse voltage v r 50 v average forward current i o 0.1 a non-repetitive peak surge current i fsm 2 a junction temperature t j 125 ? storage temperature t stg -55 q 125 ?
2008. 9. 8 2/2 kdr105 revision no : 3 i r - v r reverse voltage v r (v) 010 reverse current i r (na) 10 2 10 3 10 i f - v f forward voltage v f (mv) forward current i f (ua) 0 100 2 10 3 10 4 10 5 10 0.1 1 10 30 reverse voltage v r (v) 10 1 10 020 2 10 v r - c 40 200 300 400 500 600 20 30 40 50 capacitance c (pf)
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